Various me4410 - n channel free download

File name me4410 - n channel.pdf

ME4410 N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4410 is the N-Channel logic enhancement mode power 30V/10A,RDS(ON)=18m@VGS=10V field effect transistors are produced using high cell density, DMOS 30V/5A,RDS(ON)=20m@VGS=4.5V trench technology. This high density process is especially tailored Super high density cell design for extremely low RDS(ON) to minimize on-state resistance. These devices are particularly Exceptional on-resistance and maximum DC current suited for low voltage application such as cellular phone and capability notebook computer power management and other battery powered circuits where high-side switching, and low in-line power APPLICATIONS loss are needed in a very small outline surface mount package. Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS